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hexfet power mosfet notes through are on page 9 applications charge and discharge switch for battery application system/load switch features and benefits absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 25c continuous drain current, v gs @ 4.5v i d @ t c(bottom) = 100c continuous drain current, v gs @ 4.5v i d @ t c = 25c continuous drain current, v gs @ 4.5v (wirebond limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 2.1 0.02 9.6 max. -7.2 -9.8 -34 12 -20 -5.8 -15 -8.5 v w a c 2mm x 2mm pqfn v ds -20 v v gs max 12 v r ds(on) max (@v gs = 4.5v) 31 m r ds(on) max (@v gs = 2.5v) 53 m q g typ 9.6 nc i d (@t c(bottom) = 25c) -8.5 a g 3 s d2 d1 4s 5d 6d top view d
features benefits low thermal resistance to pcb ( 1 1.0 ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability

form quantity irlhs2242trpbf pqfn 2mm x 2mm tape and reel 4000 irlhs2242tr2pbf pqfn 2mm x 2mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note

g d s thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 13 r jc (top) junction-to-case ??? 90 c/w r ja junction-to-ambient ??? 60 r ja (<10s) junction-to-ambient ??? 42 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage -20 ??? ??? v ? . 0.01 1 0. 0. 1.1 . 1.0 10 100 100 10 1 . 10 1. . . . . 1 t d(on) turn-on delay time ??? 7.9 ??? t r rise time ??? 54 ??? t d(off) turn-off delay time ??? 54 ??? t f fall time ??? 66 ??? c iss input capacitance ??? 877 ??? c oss output capacitance ??? 273 ??? c rss reverse transfer capacitance ??? 182 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 27 41 ns q rr reverse recovery charge ??? 20 30 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = -10 a v gs = -2.5v, i d = -6.8a typ. m v dd = -10v, v gs = -4.5v v gs =-10v, v ds = -10v, i d = -8.5a v ds = 16v, v gs = 0v ??? r g = 2.0 10 . 1 0 1 a i d = -8.5a id = -8.5a v gs = 0v v ds = -10v v ds = -16v, v gs = 0v t j = 25c, i f = -8.5a, v dd = -10v di/dt = 200a/ s t j = 25c, i s = -8.5a, v gs = 0v showing the integral reverse p-n junction diode. conditions max. 18 -8.5 ? = 1.0khz conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -4.5v, i d = -8.5a ??? ??? -34 ??? ??? -8.5 mosfet symbol na ns a pf nc v gs = -4.5v ??? v gs = -12v v gs = 12v

fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 khz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -8.5a v gs = -4.5v 0 5 10 15 20 25 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -16v v ds = -10v vds= -4v i d = -8.5a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -7.0v -4.5v -3.5v -2.5v -2.0v -1.8v bottom -1.5v 60 s pulse width tj = 25c -1.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c -1.5v vgs top -10v -7.0v -4.5v -3.5v -2.5v -2.0v -1.8v bottom -1.5v 0 1 2 3 4 5 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -10v 60 s pulse width

fig 11. maximum effective transient thermal impedance, junction-to-case fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 - i d , d r a i n c u r r e n t ( a ) limited by wirebond 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.3 0.6 0.9 1.2 1.5 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -10ua id = -250ua id = -1.0ma id = -10ma 0.2 0.6 1.0 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.10 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc limited by wirebond

fig 12. on-resistance vs. gate voltage 0 2 4 6 8 10 12 -v gs, gate -to -source voltage (v) 10 20 30 40 50 60 70 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -8.5a t j = 25c t j = 125c fig 13. maximum avalanche energy vs. drain current fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v fig 15b. switching time waveforms fig 15a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f

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0.1 % + - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -2.2a -4.3a bottom -8.5a

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fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr "

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period "

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note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn package details pqfn part marking

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pqfn 2x2 outline tape and reel core tape cover tape (width) 5.4 mm tolerance +/- 0.1 mm 9.5 mm +/- 0.1 mm width remark: - dimension above are typical dimensions. - cover tape thickness is 0.048mm +/- 0.005mm. - surface resistivity 10e5 < rs <10e9. table 2: note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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* qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ** applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.49mh, r g = 50 , i as = -8.5a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to -8.5a by die-source to lead-frame bonding technology ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ msl 1 (per ipc/jedec j-std-020d ?? ) rohs c ompliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level industrial ? (per jedec jesd47f ?? guidelines ) date comments ? corrected qual level from "consumer" to "industrial" on page 1, 9 ? updated data sheet with new ir corporate template 12/16/2013 ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) revision history 10/10/2013

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